Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials
نویسندگان
چکیده
منابع مشابه
p-type doping of GaInNAs quaternary alloys
a r t i c l e i n f o a b s t r a c t Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga 1−x In x N 1− y As y quaternary alloys. We show that the Mg Ga substitution is a better choice than Zn Ga to realize the p-type doping because of the lower transition energy level and lower formation energy. The natur...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2009
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3275703